Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range.

Area of Science:

• Photonics
• Materials Science
• Semiconductor Devices

Background:

• Silicon photonics (SiPh) offers advantages for integrated optical circuits.
• Achieving wide wavelength tunability in SiPh lasers remains a challenge.
• III-V semiconductors are essential for laser gain, but integration with silicon is complex.

Purpose of the Study:

• To demonstrate a narrow-linewidth III-V-on-Si double laser.
• To achieve a broad wavelength tuning range using micro-transfer printing (µTP).
• To integrate III-V semiconductor optical amplifiers (SOAs) onto silicon laser cavities.

Main Methods:

• Fabrication of silicon laser cavities on 200 mm silicon-on-insulator (SOI) wafers.
• Micro-transfer printing (µTP) of pre-fabricated III-V SOAs with different photoluminescence (PL) peaks (~1500 nm and ~1550 nm).
• Combining outputs from two distinct laser cavities on a single chip.

Main Results:

• Demonstration of a narrow-linewidth III-V-on-Si double laser structure.
• Achieved a wavelength tuning range exceeding 110 nm.
• Successfully integrated III-V SOAs onto silicon laser cavities using µTP technology.
• Wavelength tunability across S+C+L-bands was realized.

Conclusions:

• Micro-transfer printing (µTP) is an effective technology for integrating III-V gain materials onto silicon photonic platforms.
• The demonstrated double laser structure enables a wide, continuous wavelength tuning range, crucial for optical communication systems.
• This approach paves the way for advanced, tunable silicon-based laser sources.