Tuning Threshold Voltage of Electrolyte-Gated Transistors by Binary Ion Doping

Area of Science:

• Materials Science
• Electronics Engineering
• Electrochemistry

Background:

• Electrolyte-gated transistors (EGTs) are crucial for low-voltage electronics, including neuromorphic devices and sensors.
• Controlling threshold voltage (Vth) is vital for EGTs' integration into practical electronic circuits, impacting power consumption and noise margin.

Purpose of the Study:

• To present a simple strategy for systematically tuning the threshold voltage (Vth) of EGTs.
• To explore the influence of electrochemical doping of electrolyte ions into organic p-type semiconductors on Vth.
• To demonstrate fine control over Vth and device characteristics through binary anion doping.

Main Methods:

• Electrochemical doping of electrolyte ions into organic p-type semiconductors.
• Systematic tuning of Vth by controlling anion type and molar fractions in ionogels.
• Fabrication and characterization of ion-gated inverters with binary anion doping.

Main Results:

• Achieved systematic tuning of Vth to nearly half the operating potential range of EGTs.
• Demonstrated that anion type significantly impacts Vth, subthreshold swing, and mobility.
• Showcased fine control of Vth and inversion characteristics using binary anion doping in ionogels.

Conclusions:

• The study introduces a facile method for precisely controlling EGT threshold voltage via electrochemical doping.
• Binary anion doping offers a versatile approach to tune device characteristics for ionogel-based EGTs.
• This work expands the practicality and applicability of EGTs for advanced ionic/electronic devices.