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Updated: Aug 23, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology
Joost Romijn1, Sten Vollebregt1, Luke M Middelburg1
1Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, Delft, The Netherlands.
Abstract:
This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

