Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Prediction performance of random reservoirs with different topology for nonlinear dynamical systems with different number of degrees of freedom.

Chaos (Woodbury, N.Y.)·2026

Same author

Large-Scale Cooperative Sulfur Vacancy Dynamics in Two-Dimensional MoS<sub>2</sub> From Machine Learning Interatomic Potentials.

Small (Weinheim an der Bergstrasse, Germany)·2026

Same author

Author Correction: Relatively warm deep-water formation persisted in the Last Glacial Maximum.

Nature·2026

Same author

Relatively warm deep-water formation persisted in the Last Glacial Maximum.

Nature·2026

Same author

Saturation mutagenesis identifies activating and resistance-inducing FGFR kinase domain mutations.

Nature genetics·2025

Same author

A European monsoon-like climate in a warmhouse world.

Nature communications·2025

Search research articles

Related Experiment Video

Updated: Aug 23, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Multilayer redox-based HfO_x/Al₂O₃/TiO₂ memristive structures for neuromorphic computing.

Seongae Park¹, Benjamin Spetzler², Tzvetan Ivanov¹

¹Micro- and Nanoelectronic Systems, Institute of Micro and Nanotechnologies MacroNano, Technische Universität Ilmenau, Ilmenau, Germany.

Scientific Reports

|October 30, 2022

Summary

This summary is machine-generated.

Stable memristive devices using HfO_x/Al₂O₃/TiO₂ trilayers enable tunable switching for neuromorphic computing. These devices offer multi-level analog switching and long retention times, improving upon previous designs.

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Related Experiment Videos

Last Updated: Aug 23, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Redox-based memristive devices are crucial for neuromorphic computing.
Achieving stable, tunable device characteristics remains a challenge.
Device performance is highly dependent on specific computational schemes.

Purpose of the Study:

To develop and analyze memristive devices with a HfO_x/Al₂O₃/TiO₂ trilayer structure.
To understand how stoichiometry and operating conditions influence device properties.
To provide a physics-based model for microscopic interpretation and performance stabilization.

Main Methods:

Fabrication of memristive devices with varying HfO_x stoichiometry.
Experimental analysis of device characteristics and resistive switching mechanisms.
Development of a physics-based model to explain device behavior and the role of the Al₂O₃ layer.

Main Results:

Demonstrated tunable resistive switching from area-type to filament-type within the same device.
Identified the Al₂O₃ layer's role in stabilizing area-type switching by controlling oxygen vacancy formation.
Achieved stable area-type switching with multi-level analog switching, linear resistance change, and long retention times (10⁷-10⁸ s).

Conclusions:

The HfO_x/Al₂O₃/TiO₂ trilayer offers a pathway to stable and tunable memristive devices.
Stabilized area-type switching devices exhibit superior performance without external current compliance or electroforming.
These devices show significant promise for integration into future neuromorphic computing circuits.