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Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot
Zhijun Liang1, Yifan Chen2, Rui Zhang1
1Institute of Physical Chemistry, College of Chemistry, Jilin University, Changchun 130012, P. R. China. xietf@jlu.edu.cn.
Dalton Transactions (Cambridge, England : 2003)
|November 1, 2022
Summary
Introducing a CuInS2 passivation layer into quantum dot sensitized solar cells (QDSCs) significantly boosts charge extraction and photocurrent. This innovation enhances overall device performance by reducing charge recombination at interfaces.
Area of Science:
- Materials Science
- Photovoltaics
- Nanotechnology
Background:
- Quantum dot sensitized solar cells (QDSCs) offer promising photovoltaic performance.
- Interface recombination in TiO2/CdS/CdSe QDSCs limits efficiency.
- Passivation layers are crucial for inhibiting charge recombination.
Purpose of the Study:
- To introduce CuInS2 (CIS) as an inner passivation layer in CdS/CdSe QDSCs.
- To fabricate a CdS/CIS/CdSe photoanode using an environmentally friendly method.
- To evaluate the impact of CIS passivation on charge extraction and photovoltaic performance.
Main Methods:
- Fabrication of TiO2/CdS/CIS/CdSe photoanodes.
- Utilizing CuInS2 (CIS) as an inner passivation layer.
- Measuring extracted charge amount (Q) for charge separation efficiency.
- Characterizing photocurrent density and photoconversion efficiency.
Main Results:
- The CdS/CIS/CdSe structure demonstrated outstanding charge extraction efficiency.
- Photocurrent density increased from 19.01 mA cm-2 to 22.74 mA cm-2.
- A higher photoconversion efficiency of 4.52% was achieved compared to the control device.
Conclusions:
- CuInS2 serves as an effective inner passivation layer in CdS/CdSe QDSCs.
- CIS passivation significantly enhances charge extraction and photocurrent density.
- The developed CdS/CIS/CdSe photoanode shows improved photovoltaic performance.
