Related Experiment Video
Updated: Aug 23, 2025

11:24
Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
5.8K
Tailoring Dirac Fermions by In-Situ Tunable High-Order Moiré Pattern in Graphene-Monolayer Xenon Heterostructure
Chunlong Wu1, Qiang Wan1, Cao Peng1
1Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
Physical Review Letters
|November 4, 2022
Summary
Researchers tuned moiré patterns in graphene-xenon structures, observing Dirac node behavior changes. This work offers a new way to control Dirac fermions in tunable electronic systems.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Surface Science
Background:
- Moiré patterns in heterostructures offer tunable electronic properties.
- Graphene-xenon systems provide a unique platform for studying moiré phenomena.
- Controlling moiré periodicity is crucial for manipulating electronic band structures.
Purpose of the Study:
- To experimentally investigate high-order moiré patterns in graphene-monolayer xenon heterostructures.
- To demonstrate in-situ tuning of moiré periodicity.
- To explore the evolution of Dirac fermions and band structures with varying moiré patterns.
Main Methods:
- Fabrication of graphene-monolayer xenon heterostructures.
- In-situ tuning of xenon lattice constant via annealing.
- Angle-resolved photoemission spectroscopy (ARPES) for electronic structure analysis.
Main Results:
- Continuous tuning of moiré periodicity from nanometers to infinity was achieved.
- Observed Dirac node replica movement, overlap, and gap opening with moiré expansion.
- Experimental results align with a moiré Hamiltonian model predicting narrow moiré bands and intervalley coupling.
Conclusions:
- Demonstrated a versatile platform for studying continuous moiré pattern evolution.
- Provided an unprecedented approach for tailoring Dirac fermions with tunable intervalley coupling.
- The findings pave the way for novel electronic devices based on moiré superlattices.

