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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Colloidal Quantum Dot Infrared Lasers Featuring Sub-Single-Exciton Threshold and Very High Gain
Nima Taghipour1, Mariona Dalmases1, Guy L Whitworth1
1ICFO, Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain.
Advanced Materials (Deerfield Beach, Fla.)
|November 5, 2022
Summary
Engineered colloidal quantum dots (CQDs) significantly lower infrared laser thresholds by suppressing Auger recombination and enabling efficient optical gain. This breakthrough paves the way for solution-processed infrared laser diodes.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Infrared laser devices traditionally require high pumping intensities and suffer from short gain lifetimes.
- Colloidal quantum dots (CQDs) show promise as gain media but face challenges with Auger recombination and low gain coefficients.
Purpose of the Study:
- To develop efficient infrared gain media using engineered CQDs.
- To reduce optical gain thresholds and improve lasing performance in the near-infrared spectrum.
Main Methods:
- Utilized PbS/PbSSe core/alloyed-shell CQDs as the gain medium.
- Investigated Auger recombination suppression and amplified spontaneous emission (ASE) thresholds.
- Employed transient absorption spectroscopy to measure optical gain and exciton populations.
- Achieved near-infrared lasing at 1670 nm.
Main Results:
- Achieved suppressed Auger recombination with a lifetime of 485 ps.
- Lowered the ASE threshold to 300 µJ cm⁻², with a net modal gain coefficient of 2180 cm⁻¹.
- Demonstrated a reduced optical gain threshold of 0.45 excitons-per-dot due to ground state absorption bleaching.
- Attained a fivefold reduction in ASE threshold (0.70 excitons-per-dot) and near-infrared lasing at 1670 nm (0.87 excitons-per-dot threshold).
Conclusions:
- Engineered core/shell CQDs significantly reduce infrared lasing thresholds, comparable to visible counterparts.
- This advancement enables solution-processed infrared laser diodes.
- Highlights the potential of CQDs for next-generation optoelectronic devices.
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