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Anisotropic dependence of radiation from excitons in Ga2O3/MoS2 heterostructure
1School of Science, Guilin University of Aerospace Technology Guilin 541004 People's Republic of China dengzex@mail2.sysu.edu.cn.
Abstract:
The anisotropic dependence of radiation arising from exciton recombination in the Ga2O3/MoS2 heterostructure is investigated, using density functional theory and the Bethe-Salpeter equation. The wurtzite (WZ) and zinc blende (ZB) structures of the Ga2O3 monolayer with ferroelectric (FE) properties are assembled with a MoS2 monolayer. Projected band structure, charge transfer and life time of excitons are discussed, to analyze which transition may be important to the creation of excitons from the electron-hole pair. A general formula of the angle-dependent intensities of radiation is derived. The characteristics of angle-dependent intensities that are closely related to the dipole moment of excitons are discussed, from the viewpoint of in-plane and out-of-plane polarizations. These predictions on radiation of the Ga2O3/MoS2 heterostructure should guide exciton dynamics in low dimensional systems and rational design of optoelectronic devices.
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