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Updated: Aug 22, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Hexagonal Lu1-InFeO3 Room-Temperature Multiferroic Thin Films.
Mei Ying Liu1, Jun Xi Yu2,3, Xiao Li Zhu1
1School of Materials Science and Engineering, Zhejiang University, Hangzhou310027, China.
Stable hexagonal multiferroic thin films of lutetium-indium ferrite were achieved using pulsed laser deposition. These materials exhibit room-temperature multiferroic properties and strong magnetoelectric coupling, showing potential for advanced memory devices.
Area of Science:
- Materials Science
- Solid State Physics
- Magnetism
Background:
- Hexagonal rare earth ferrites (h-RFeO3) are promising room-temperature multiferroics.
- Achieving a stable hexagonal structure is challenging due to the prevalence of the orthorhombic phase.
Purpose of the Study:
- To synthesize stable hexagonal h-Lu1-xInxFeO3 thin films.
- To characterize their multiferroic properties at room temperature.
- To explore their potential for magnetoelectric devices.
Main Methods:
- Pulsed laser deposition (PLD) of h-Lu1-xInxFeO3 thin films on Nb-SrTiO3 (111) substrates.
- X-ray diffraction (XRD) and selected area electron diffraction (SAED) for structural analysis.
- Ferroelectric and magnetoelectric characterization at room temperature.
Main Results:
- Stable hexagonal structure achieved for h-Lu1-xInxFeO3 in a wide composition range (x=0.5-0.7) via chemical pressure and epitaxial strain.
- Super-cell match observed between the thin film and substrate.
- Saturated ferroelectric hysteresis loop with remanent polarization of 4.3 μC/cm² and confirmed polarization switching.
- Strong magnetoelectric coupling with a linear magnetoelectric coefficient of 1.9 V/cm Oe.
Conclusions:
- The h-Lu1-xInxFeO3 thin films demonstrate stable hexagonal structures and significant room-temperature multiferroic properties.
- The observed magnetoelectric coupling is orders of magnitude higher than in h-RFeO3 ceramics.
- These findings highlight the potential of h-Lu1-xInxFeO3 thin films for applications in magnetoelectric memory and detection devices.
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