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Published on: December 3, 2013
Electron Density Changes and Ultrafast Carrier Dynamics of the Antiferromagnetic Semiconductor MnPS3 through Magnetic
Junfeng Liu1, Danmin Liu1, Yachao Li2
1Beijing Key Lab of Microstructure and Property of Advanced Material, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing100124, P. R. China.
Abstract:
Studying ultrafast dynamics provides us with a way to modify materials from the timescale of particle interaction, and the related research on antiferromagnetic semiconductors is still inadequate. Based on the electron density reconstruction, we achieve the visualization of magnetic interactions of bulk antiferromagnetic MnPS3 in the ground state, reveal the role of two atomic site occupations of S atoms in different magnetic phase transitions, and provide the theoretical and experimental support for modifying magnetic properties by selectively replacing the S atom. The ultrafast carrier dynamics can provide information from the excited state to the ground state. Based on time-resolved transmittance measurements, ultrafast carrier dynamics of MnPS3 are reported. The phonon-assisted gap transition driven by the electronic structure is characterized. The coupling relationship among electrons, spin, and phonons is established. Furthermore, the spin orientations within different phases are confirmed.
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