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Updated: Aug 22, 2025

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Carbon nanotube-based flexible high-speed circuits with sub-nanosecond stage delays
Guanhua Long1, Wanlin Jin1, Fan Xia1,2
1Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, 100871, Beijing, China.
Abstract:
High-speed flexible circuits are required in flexible systems to realize real-time information analysis or to construct wireless communication modules for emerging applications. Here, we present scaled carbon nanotube-based thin film transistors (CNT-TFTs) with channel lengths down to 450 nm on 2-μm-thick parylene substrates, achieving state-of-the-art performances of high on-state current (187.6 μA μm-1) and large transconductance (123.3 μS μm-1). Scaling behavior analyses reveal that the enhanced performance introduced by scaling is attributed to channel resistance reduction while the contact resistance (180 ± 50 kΩ per tube) remains unchanged, which is comparable to that achieved in devices on rigid substrates, indicating great potential in ultimate scaled flexible CNT-TFTs with high performance comparable to their counterparts on rigid substrates where contact resistance dominates the performance. Five-stage flexible ring oscillators are built to benchmark the speed of scaled devices, demonstrating a 281 ps stage delay at a low supply voltage of 2.6 V.

