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An Inductorless Gain-Controllable Wideband LNA Based on CCCIIs
Qiuzhen Wan1, Jiong Liu1, Simiao Chen1
1College of Information Science and Engineering, Hunan Normal University, Changsha 410081, China.
Micromachines
|November 11, 2022
Summary
This study presents an inductorless, gain-controllable wideband low noise amplifier (LNA) using current controlled current conveyors (CCCIIs). The LNA offers adjustable gain and excellent performance across 0.5-2.5 GHz, ideal for RF applications.
Area of Science:
- Electrical Engineering
- Microelectronics
- RF Circuit Design
Background:
- Low noise amplifiers (LNAs) are critical components in modern wireless communication systems.
- Traditional LNAs often require inductors, increasing chip area and design complexity.
- Gain controllability is essential for adaptive RF front-ends.
Purpose of the Study:
- To introduce a novel inductorless and gain-controllable wideband LNA.
- To utilize second-generation current controlled current conveyors (CCCIIs) as fundamental building blocks.
- To achieve efficient amplification and impedance matching for RF applications.
Main Methods:
- The proposed LNA employs CCCIIs for both amplification and impedance matching stages.
- Voltage gain is controlled by adjusting the DC biasing current of the CCCII.
- Post-layout simulations were performed using a 0.18 μm RF CMOS technology.
Main Results:
- Achieved a controllable voltage gain from 1 to 18 dB across the 0.5-2.5 GHz band.
- Demonstrated a typical gain S21 of 12.6 dB with ±1.5 dB ripple.
- Reported excellent return loss (S11: -21.4 to -16.6 dB, S22: -18.6 to -10.6 dB) and high reverse isolation (S12: -65.2 to -39.5 dB).
- Obtained a noise figure of 4.05–4.35 dB and an IIP3 of -2.5 dBm at 1.5 GHz.
- Achieved a compact chip area of 0.096 mm² with a low power consumption of 12.0 mW.
Conclusions:
- The proposed CCCII-based LNA offers a viable inductorless solution for wideband RF systems.
- The gain controllability and compact size make it suitable for various wireless applications.
- This design advances the development of efficient and scalable RF front-end components.
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