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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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Resistance Switching in Polycrystalline C12A7 Electride
Ivan D Yushkov1,2, Gennadiy N Kamaev2, Vladimir A Volodin1,2
1Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Department of Physics, Novosibirsk State University, Pirogova Str., 2, 630090 Novosibirsk, Russia.
Micromachines
|November 11, 2022
Summary
This study explores the memory properties of a polycrystalline mayenite electride material. Researchers found distinct conduction mechanisms in low and high resistance states, linked to free electron concentration changes.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Electride materials exhibit unique electronic properties.
- Polycrystalline mayenite (C12A7:e-) is a promising candidate for memory applications.
- Understanding charge transport mechanisms is crucial for device optimization.
Purpose of the Study:
- To investigate the memristive properties of a polycrystalline mayenite electride.
- To characterize the material's phase composition and electride state.
- To elucidate the temperature-dependent conduction mechanisms in different resistance states.
Main Methods:
- X-ray Diffraction (XRD)
- Transmission Electron Microscopy (TEM)
- Raman Spectroscopy
- Infrared Spectroscopy
- Electron Paramagnetic Resonance (EPR)
- Conductivity Measurements
- Current-Voltage (I-V) Characterization
- Temperature Dependence Analysis
Main Results:
- The phase composition and electride state of C12A7:e- were confirmed.
- Low Resistance State (LRS) conduction follows the Hurd quantum tunnelling model.
- High Resistance State (HRS) conduction is described by the Arrhenius model with two activation energies (25.5 and 40.6 meV).
- Conduction mechanism differences are attributed to variations in free electron concentration.
Conclusions:
- The polycrystalline mayenite electride exhibits distinct memristive behaviors.
- Quantum tunnelling and Arrhenius models accurately describe LRS and HRS conduction, respectively.
- Free electron concentration is a key factor governing the material's memory properties.
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