Study on Modulation Bandwidth of GaN-Based Micro-Light-Emitting Diodes by Adjusting Quantum Well Structure

GaN-based blue micro-light-emitting diodes (μ-LEDs) with different structures were designed, of which the effect of quantum well (QW) structure on modulation bandwidth was numerically explored. By using trapezoidal QWs, the quantum-confined Stark effect (QCSE) can be reduced, leading to an enhanced electron-hole wave function overlap, thereby increasing the recombination rate and reducing the differential carrier lifetime. In addition, the improved hole transport also creates favorable conditions for shortening the differential carrier lifetime. Furthermore, by comparing with traditional μ-LEDs with different thicknesses of QW, the modulation bandwidth of μ-LEDs with trapezoidal QWs exhibits a large advantage at lower current densities of below 2 kA/cm².