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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

528
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials.

Jialei Miao1,2, Xiaowei Zhang1, Ye Tian1

  • 1Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China.

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Summary

Two-dimensional (2D) semiconductors offer potential for scaled field-effect transistors (FETs). This review details strategies to overcome high contact resistance, a key challenge limiting 2D FET performance.

Keywords:
Fermi-level pinningcontact resistancetransistortwo-dimensional (2D) materials

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Two-dimensional (2D) semiconductors are promising for scaled field-effect transistors (FETs) due to atomic thinness and high carrier mobility.
  • Performance limitations in 2D FETs stem from extrinsic factors like high contact resistance, interfacial scattering, and doping.
  • High contact resistance is a dominant challenge hindering the widespread adoption of 2D semiconductor devices.

Purpose of the Study:

  • To review the fundamental understanding of contact resistance in 2D semiconductor devices.
  • To discuss the Schottky-Mott model and the Fermi-level pinning effect.
  • To present strategies for fabricating low-contact-resistance short-channel 2D FETs.

Main Methods:

  • Introduction to the Schottky-Mott model for ideal Schottky barriers.
  • Discussion of Fermi-level pinning mechanisms in 2D semiconductors, particularly related to metal deposition.
  • Review of contact structures and fabrication strategies for low-resistance devices.

Main Results:

  • The Schottky-Mott model provides a baseline for understanding ideal contact behavior.
  • Fermi-level pinning, induced by high-energy metal deposition, significantly contributes to high contact resistance.
  • Specific contact structures and fabrication methods can mitigate these issues.

Conclusions:

  • Addressing contact resistance is crucial for realizing high-performance 2D FETs.
  • Practical guidelines are provided for fabricating low-contact-resistance 2D FETs.
  • The review offers insights into the future development of 2D semiconductor technology.