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Crystallinity Effect on Electrical Properties of PEALD-HfO2 Thin Films Prepared by Different Substrate Temperatures
Xiao-Ying Zhang1, Jing Han1, Duan-Chen Peng1
1Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Nanomaterials (Basel, Switzerland)
|November 11, 2022
Summary
Plasma enhanced atomic layer deposition (PEALD) of hafnium oxide (HfO2) thin films at 300 °C improved crystallinity and density. This resulted in superior dielectric constant and breakdown electric field for electronic applications.
Area of Science:
- Materials Science
- Thin Film Deposition
- Semiconductor Devices
Background:
- Hafnium oxide (HfO2) exhibits valuable physical and chemical properties for diverse applications.
- Thin film deposition techniques are crucial for fabricating advanced electronic components.
Purpose of the Study:
- To investigate the effect of substrate temperature on HfO2 film properties using PEALD.
- To correlate structural and morphological characteristics with electrical performance.
Main Methods:
- Plasma enhanced atomic layer deposition (PEALD) for HfO2 film synthesis on silicon.
- Characterization using spectroscopic ellipsometry, GIXRD, XRR, FESEM, AFM, and XPS.
- Electrical property evaluation via capacitance-voltage and current-voltage measurements.
Main Results:
- Increasing substrate temperature enhanced HfO2 film crystallinity and density.
- HfO2 films deposited at 300 °C demonstrated optimal structural properties.
- Higher crystallinity correlated with improved electrical characteristics, including dielectric constant and breakdown field.
Conclusions:
- Substrate temperature is a critical parameter in PEALD of HfO2.
- Optimized HfO2 films exhibit enhanced dielectric performance for potential use in advanced electronic devices.
