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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Tuning the optical absorption performance of MoS2 monolayers with compressive strain
Yibin Zhao1, Zhengwei Du1, Licheng Wang2
1MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China. ekan@njust.edu.cn.
Abstract:
Strain engineering has been extensively applied as a promising strategy in the regulation of physical and chemical properties of two-dimensional (2D) materials, which remarkably broadens their application prospects in flexible electronics and chip manufacturing. However, the difficulty in fixing a flexible substrate under compression and the challenge in adjusting the focal distance have hindered the in-depth investigation of compressive strain. Here, we fabricated a home-made strain loading device and proposed a compressive strain measurement method, via which the strain-dependent optical absorption properties of MoS2 monolayers under compression has been studied. According to the measured optical absorption spectra, the first blueshift and then redshift trend under compression was obviously observed. The reliability of the experimentally observed trend in peak position shift was theoretically verified by density functional theory calculation. Our work offers a feasible way to characterize optical properties of 2D materials under compressive strain and expands the space for the development of next-generation micro/nano-scale optoelectronic devices.
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