Dual-channel P-type ternary DNTT-graphene barristor

Area of Science:

• Semiconductor device physics
• Materials science
• Electronics engineering

Background:

• P-type ternary switch devices are essential for advancing complementary ternary circuits.
• Existing devices face challenges in achieving distinct output states and controllable threshold voltages.

Purpose of the Study:

• To demonstrate a novel p-type ternary device with three distinct electrical output states.
• To enable controllable threshold voltage values for ternary circuits.
• To validate the design of complementary standard ternary inverters.

Main Methods:

• Fabrication of a dual-channel dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene-graphene barristor structure.
• Integration of novel contact-resistive and contact-doping layers.
• Experimental calibration of a ternary device model for circuit simulation.

Main Results:

• Demonstration of a p-type ternary device with three clearly separated electrical output states.
• Achieved controllable threshold voltage values for the ternary states.
• Successful simulation of a complementary standard ternary inverter operating around 1V.

Conclusions:

• The developed dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene-graphene barristor is a viable p-type ternary switch.
• The novel contact structures facilitate distinct ternary states and controllable voltages.
• The device model supports the practical implementation of ternary circuits.