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Updated: Aug 22, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Dual-channel P-type ternary DNTT-graphene barristor
Yongsu Lee1, Seung-Mo Kim1, Kiyung Kim1
1Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-gu, Pohang, Gyeongbuk, 37673, Republic of Korea.
Abstract:
P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene-graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.
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