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Updated: Aug 22, 2025

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Published on: May 17, 2024
Achieving higher thermoelectric performance of n-type PbTe by adjusting the band structure and enhanced phonon
Wei Wu1,2, Chen Zhu1,2, Hongwei Ming1,2
1Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China. zhangjian@issp.ac.cn.
Abstract:
Due to the very distinct electronic band structure and lower power factor, the exploration of n-type PbTe as thermoelectric materials has historically fallen behind that of p-type PbTe. In this work, n-type Pb0.97Sb0.03Te-based composites incorporated with Cu12Sb4S13 nanoparticles are synthesized and investigated. Sb doping is utilized to modify its carrier concentration in order to obtain n-type PbTe materials with a high power factor. Then, the incorporation of Cu12Sb4S13 nanoparticles can generate semi-coherent nanophase CuTe, and simultaneously optimize the thermal and electrical properties due to remarkable energy filtering effects and interface scattering in the higher temperature range. Eventually, a peak figure of merit ZT ≈ 1.58 was obtained at 773 K for the sample Pb0.97Sb0.03Te + 1.5 wt% Cu12Sb4S13, indicating that the incorporation of Cu12Sb4S13 in Pb0.97Sb0.03Te is an effective approach to improve its thermoelectric performance.
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