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Updated: Aug 22, 2025

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Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers
Kenneth A Lin1, Nitin Prasad2, G William Burg1
1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA.
We observed enhanced interlayer tunneling in twisted graphene bilayers, revealing crucial interlayer phase coherence at zero bias. This finding highlights twist control as essential for understanding quantum phenomena in layered materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Graphene heterostructures exhibit unique electronic properties influenced by stacking order and twist angle.
- Interlayer coherence in van der Waals heterostructures is a key phenomenon for novel electronic devices.
Purpose of the Study:
- To investigate interlayer tunneling and coherence in twist-controlled double monolayer graphene.
- To explore the role of twist angle in revealing interlayer phase coherence.
Main Methods:
- Fabrication of twist-controlled double monolayer graphene heterostructures.
- Transport measurements in the quantum Hall regime, focusing on zero interlayer bias.
- Analysis of interlayer conductance peaks and linewidth variations.
Main Results:
- Enhanced interlayer tunneling with reduced linewidth observed at zero interlayer bias.
- Stable zero-bias interlayer conductance peaks detected near specific layer filling factors (ν_{T}, ν_{B} ≈ ±1/2, ±3/2) and total filling factors (ν = ±1, ±3).
- Emergence of interlayer phase coherence signaled by conductance peaks.
Conclusions:
- Twist control is a critical factor in observing and understanding interlayer coherence in graphene heterostructures.
- The observed phenomena provide insights into the fundamental physics of layered two-dimensional materials.
- This work paves the way for utilizing twist engineering in designing future electronic devices.
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