In situ interfacial passivation with an arylphosphine oxide and phosphonate electron transporting layer for efficient...

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• Perovskite quantum dot light-emitting diodes (PeQLEDs) are promising for displays and lighting.
• Electron transporting layers (ETLs) are crucial for PeQLED performance.
• Current ETL fabrication methods often require vacuum deposition, limiting low-cost solution processing.

Purpose of the Study:

• To develop efficient all-solution-processed PeQLEDs.
• To investigate arylphosphine oxide (SPPO13) and phosphonate (TPPO) as ETLs for PeQLEDs.
• To demonstrate in situ interfacial passivation for improved device performance.

Main Methods:

• Utilized arylphosphine oxide (SPPO13) and phosphonate (TPPO) as electron transporting layers (ETLs).
• Employed an orthogonal solvent strategy for all-solution processing of PeQLEDs.
• Investigated the coordination between P=O in ETLs and Pb atoms in perovskite quantum dots (PeQDs) for in situ passivation.

Main Results:

• Achieved efficient all-solution-processed PeQLEDs by using SPPO13 and TPPO as ETLs.
• Demonstrated in situ interfacial passivation, enhancing photoluminescence quantum yields and lifetimes of PeQD films.
• Fabricated PeQLEDs with bright green emission, achieving a current efficiency of 24.1 cd A^-1 (12.1 lm W^-1, 6.47%) and CIE coordinates of (0.12, 0.79).

Conclusions:

• Arylphosphine oxide and phosphonate are effective ETLs for solution-processed PeQLEDs.
• In situ interfacial passivation is a viable strategy to improve PeQLED performance.
• The developed all-solution-processed PeQLEDs offer a promising pathway for cost-effective, high-performance optoelectronic devices.