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Related Concept Videos

P-N junction01:11

P-N junction

617
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Van der Waals Equation01:10

Van der Waals Equation

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The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the volume...
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Van der Waals Interactions01:24

Van der Waals Interactions

64.6K
Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

309
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

1.1K
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
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Josephson Effect in NbS2 van der Waals Junctions.

Chuanwen Zhao1, Xin Yi1, Qiao Chen1

  • 1MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan430074, China.

The Journal of Physical Chemistry Letters
|November 15, 2022
PubMed
Summary
This summary is machine-generated.

Researchers developed van der Waals (vdW) Josephson junctions using NbS2, achieving a superconducting transition temperature of 5.84 K. This advancement could enable novel superconducting devices leveraging 2D materials.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Superconductivity

Background:

  • Two-dimensional (2D) transition metal dichalcogenide (TMD) superconductors offer unique properties like spin-orbit coupling and spin-valley locking.
  • Van der Waals (vdW) Josephson junctions are promising for advanced superconducting devices.
  • Fabrication of high-quality vdW heterostructures is crucial for exploring novel superconducting phenomena.

Purpose of the Study:

  • To fabricate and characterize vertically stacked NbS2/NbS2 Josephson junctions.
  • To investigate the superconducting properties of these vdW Josephson junctions.
  • To explore the potential of 2D TMDs in advanced superconducting device applications.

Main Methods:

  • Fabrication of vertically stacked NbS2/NbS2 Josephson junctions using a modified all-dry transfer technique.
  • Systematic low-temperature transport measurements to characterize device performance.
  • Analysis of superconducting transition temperature, critical current density, and superconducting energy gap.

Main Results:

  • The NbS2/NbS2 Josephson junction exhibits a superconducting transition temperature of 5.84 K.
  • A critical current density of 3975 A/cm^2 at 2 K was achieved.
  • The extracted superconducting energy gap (Δ = 0.58 meV) is smaller than predicted by the single-band s-wave Bardeen-Cooper-Schrieffer (BCS) model (Δ = 0.89 meV).

Conclusions:

  • Vertically stacked NbS2/NbS2 vdW Josephson junctions can be successfully fabricated and exhibit robust superconducting properties.
  • The observed superconducting energy gap deviates from the standard BCS model, suggesting complex superconducting mechanisms in 2D TMDs.
  • These findings pave the way for developing advanced superconducting devices utilizing the unique properties of 2D TMD superconductors.