A simple and fast method for the fabrication of p-typeβ-Ga₂O₃by electrochemical oxidation method with DFT...

In this work, a simple electrochemical oxidation method has been used to prepare p-typeβ-Ga₂O₃nanoparticles. This method overcomes the problem of doping high energy gap semiconductors to form p-type. The electron holes ofβ-Ga₂O₃were caused by oxygen vacancy (Vo) and showed the shorter lattice constant and preferred orientation in XRD analysis. The peak area of oxygen vacancy also reflects a higher ratio than n-type Ga₂O₃in x-ray photoelectron spectroscopy (XPS). The adsorption of reducing gas (CO, CH₄, and H₂) enhanced the resistance of theβ-Ga₂O₃confirming the p-type character of NPs. The DFT calculations showed that oxygen vacancy leads to higher energy of the Fermi level and is near the valence band. The binding energy of Ga₂O₃and after interaction with gas molecular was also calculated which is analogous to our experimental data.