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Enabling Durable Ultralow-k Capacitors with Enhanced Breakdown Strength in Density-Variant Nanolattices
Min-Woo Kim1,2, Max L Lifson3, Rebecca Gallivan3
1School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Korea.
Abstract:
Ultralow-k materials used in high voltage devices require mechanical resilience and electrical and dielectric stability even when subjected to mechanical loads. Existing devices with organic polymers suffer from low thermal and mechanical stability while those with inorganic porous structures struggle with poor mechanical integrity. Recently, 3D hollow-beam nanolattices have emerged as promising candidates that satisfy these requirements. However, their properties are maintained for only five stress cycles at strains below 25%. Here, we demonstrate that alumina nanolattices with different relative density distributions across their height elicit a deterministic mechanical response concomitant with a 1.5-3.3 times higher electrical breakdown strength than nanolattices with uniform density. These density-variant nanolattices exhibit an ultralow-k of ≈1.2, accompanied by complete electric and dielectric stability and mechanical recoverability over 100 cyclic compressions to 62.5% strain. We explain the enhanced insulation and long-term cyclical stability by the bi-phase deformation where the lower-density region protects the higher-density region as it is compressed before the higher-density region, allowing to simultaneously possess high strength and ductility like composites. This study highlights the superior electrical performance of the bi-phase nanolattice with a single interface in providing stable conduction and maximum breakdown strength.
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