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Zn-Doped P-Type InAs Nanocrystal Quantum Dots
Lior Asor1, Jing Liu2, Shuting Xiang3,4
1The Institute of Chemistry and The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
Advanced Materials (Deerfield Beach, Fla.)
|November 18, 2022
Summary
This study demonstrates p-type doping in Indium Arsenide (InAs) nanocrystal quantum dots using zinc. This breakthrough enables control over carrier type, crucial for developing novel short-wave infrared optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Heavy metal-free III-V semiconductor nanocrystal quantum dots (QDs) are promising for optoelectronics.
- Indium Arsenide (InAs) nanocrystals typically exhibit n-type behavior, hindering p-type applications.
- Fabricating p-n homojunction devices requires controlled carrier type in nanocrystals.
Purpose of the Study:
- To achieve p-type doping in InAs nanocrystals.
- To investigate the mechanism of post-synthesis zinc doping.
- To enhance the optoelectronic properties of InAs QDs for short-wave infrared applications.
Main Methods:
- Post-synthesis doping of InAs nanocrystals with zinc precursors.
- Utilizing diethylzinc as a reactive precursor for successful doping.
- Characterization using X-ray absorption spectroscopy, high-resolution electron microscopy, and X-ray photoelectron spectroscopy.
Main Results:
- Achieved successful p-type doping in InAs QDs using diethylzinc.
- Confirmed substitutional doping of Zn2+ replacing In3+ via X-ray absorption spectroscopy.
- Observed enhanced near-infrared photoluminescence attributed to zinc surface passivation.
Conclusions:
- Demonstrated controlled carrier type switching in InAs QDs.
- Improved photoluminescence enhances suitability for optoelectronic devices.
- Paves the way for heavy-metal-free nanocrystal-based short-wave infrared optoelectronics.
