Impermeable Atomic Layer Deposition for Sputtering Buffer Layer in Efficient Semi-Transparent and Tandem Solar Cells...

Area of Science:

• Materials Science
• Renewable Energy Technologies
• Nanotechnology

Background:

• Atomic layer deposition (ALD) is a key technology for buffer layers in semi-transparent perovskite solar cells (ST-PSCs) and tandem solar cells.
• Unreactive substrates in ALD lead to island growth and pinholes, compromising anti-sputtering properties.

Purpose of the Study:

• To develop an impermeable ALD buffer layer for perovskite solar cells (PSCs).
• To improve the performance and stability of ST-PSCs and perovskite/silicon tandem solar cells.

Main Methods:

• Utilized ALD tin oxide (SnO_x) as a sputtering buffer layer in p-i-n structured PSCs.
• Activated the unreactive PCBM electron transport layer (ETL) by introducing reaction sites to enable layer-by-layer ALD growth.
• Fabricated ST-PSCs and perovskite/silicon tandem solar cells.

Main Results:

• Achieved power conversion efficiencies (PCE) of 20.25% for ST-PSCs and 23.31% for tandem solar cells.
• Demonstrated enhanced stability, with unencapsulated devices retaining over 99% of initial PCE after 5100 hours of aging.
• Successfully created impermeable ALD layers by activating the substrate.

Conclusions:

• Introducing reaction sites on the PCBM layer enables the formation of impermeable ALD SnO_x buffer layers.
• This method significantly improves the efficiency and long-term stability of perovskite-based solar cells.
• Paves the way for scalable manufacturing of stable perovskite solar cells, ST-PSCs, and tandem solar cells.