Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

444
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
444
Types of Semiconductors01:20

Types of Semiconductors

864
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
864
Field Effect Transistor01:29

Field Effect Transistor

524
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
524
P-N junction01:11

P-N junction

615
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
615
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

446
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
446
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

434
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
434

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Environmental eustress inhibits CCL2 to overcome doxorubicin-induced cardiotoxicity and alleviate tumor growth.

Science bulletin·2026
Same author

Comprehensive noise model impact for classical signals and CV-QKD coexistence in multi-core fiber.

Optics express·2026
Same author

Kit Ligand enhances in vitro oocyte maturation and early embryonic development in sheep.

Animal reproduction science·2026
Same author

Tin perovskite transistors stabilized through volatile coordination.

Nature·2026
Same author

Monolithic 3D-Integrated All-Solid Ion-Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi-Timescale Reservoir Computing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Efficient and Stable Ligand-Exchange Process Using Perovskite Nanocrystals Synthesized from a Liquid Crystalline Antisolvent.

ACS nanoscience Au·2026

Related Experiment Video

Updated: Aug 20, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

High-Performance Solution-Processed 2D P-Type WSe2 Transistors and Circuits through Molecular Doping.

Taoyu Zou1, Hyun-Jun Kim1, Soonhyo Kim1,2

  • 1Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|November 23, 2022
PubMed
Summary

Researchers developed a new doping method using bromine (Br2) to significantly boost the performance of p-type 2D semiconductor inks. This breakthrough enables high-mobility transistors crucial for advanced flexible electronics and integrated circuits.

Keywords:
Van der Waals filmWSe 2 nanosheetschalcogenide layered p-type semiconductorsmolecular dopingsolution processthin film transistors

More Related Videos

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

Related Experiment Videos

Last Updated: Aug 20, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • High-performance devices require semiconducting inks with excellent charge carrier mobility.
  • Developing solution-processed p-type 2D semiconducting inks with high mobility is essential for complementary integrated circuits.
  • Current 2D semiconductor inks face limitations in achieving the necessary performance for advanced applications.

Purpose of the Study:

  • To introduce a versatile doping strategy to enhance hole mobility in p-type 2D layered materials.
  • To enable the fabrication of high-performance p-type transistors using solution-processed 2D semiconductors.
  • To demonstrate the potential for creating flexible devices and monolithic circuitry.

Main Methods:

  • Utilized a doping strategy involving bromine (Br2) for 2D layered materials.
  • Fabricated and characterized p-type transistors using Br2-doped WSe2 (tungsten diselenide).
  • Constructed complementary inverters using patterned p-type WSe2 and n-type MoS2 (molybdenum disulfide) films.

Main Results:

  • Achieved field-effect hole mobility exceeding 27 cm2 V-1 s-1 in Br2-doped WSe2 transistors.
  • Demonstrated a high on/off current ratio of approximately 107.
  • Exhibited excellent operational stability and fabricated complementary inverters with a high gain of 1280.

Conclusions:

  • The Br2 doping strategy significantly enhances hole mobility in 2D layered materials.
  • Solution-processed 2D semiconductors offer a low-temperature, scalable route for flexible electronics and integrated circuits.
  • This work paves the way for advanced applications in flexible devices and monolithic circuitry.