Mechanical Properties and Oxidation Behavior of TaWSiN Films

This study explored the structural characteristics, mechanical properties, and oxidation behavior of W-enriched TaWSiN films prepared through co-sputtering. The atomic ratios [W/(W + Ta)] of the as-deposited films maintained a range of 0.77-0.81. The TaWSiN films with a Si content of 0-13 at.% were crystalline, whereas the film with 20 at.% Si was amorphous. The hardness and Young's modulus of crystalline TaWSiN films maintained high levels of 26.5-29.9 GPa and 286-381 GPa, respectively, whereas the hardness and Young's modulus of the amorphous Ta₇W₃₃Si₂₀N₄₀ films exhibited low levels of 18.2 and 229 GPa, respectively. The oxidation behavior of TaWSiN films was investigated after annealing at 600 °C in a 1%O₂-Ar atmosphere, and cone-like Ta_0.3W_0.7O_2.85 oxides formed and extruded from the TaWSiN films.