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Updated: Aug 19, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress

Juraj Marek1, Jozef Kozarik1,2, Michal Minarik1

  • 1Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, 812 19 Bratislava, Slovakia.

Materials (Basel, Switzerland)
|November 26, 2022
PubMed

Keywords:
SiC MOSFETTrenchMOSFETcharge trap statesdegradationreliabilityrepetitive UIS

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