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High-Power Quantum Cascade Lasers Emitting at 8 μm: Technology and Analysis
Evgeniia Cherotchenko1, Vladislav Dudelev1, Dmitry Mikhailov1
1Ioffe Institute, 194021 St. Petersburg, Russia.
Nanomaterials (Basel, Switzerland)
|November 26, 2022
Summary
This study showcases a novel epitaxial growth technique for quantum cascade lasers (QCLs). InP-based designs achieved record peak power in the 8 μm range due to superior heat dissipation.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- Quantum cascade lasers (QCLs) are crucial for mid-infrared applications.
- Optimizing QCL performance requires advanced material and growth strategies.
- Efficient heat dissipation is a key challenge for high-power QCL operation.
Purpose of the Study:
- To demonstrate a two-stage epitaxial growth technique for QCLs.
- To investigate the impact of different cladding and contact layer materials on QCL performance.
- To achieve record-high peak power in the 8 μm spectral region.
Main Methods:
- Utilized a two-stage epitaxial growth technique.
- Fabricated and measured three distinct QCL designs.
- Conducted time-resolved spectral studies and power/efficiency measurements.
Main Results:
- Achieved record-high peak power for QCLs in the 8 μm spectral region.
- Demonstrated superior power characteristics with InP-based upper cladding and InP contact layers compared to InGaAs.
- Identified enhanced heat dissipation as the reason for improved performance with InP.
Conclusions:
- The two-stage epitaxial growth technique is effective for high-power QCL development.
- InP-based materials offer significant advantages for QCL heat dissipation and power output.
- This work advances the design and performance of mid-infrared quantum cascade lasers.
