Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

909
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
909

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Starch-Glycerol-Based Hydrogel Memristors for Bio-Inspired Auditory Neuron Applications.

Gels (Basel, Switzerland)·2025
Same author

Physically Transient Gelatin-Based Memristors of Buildable Logic Gates.

Gels (Basel, Switzerland)·2025
Same author

Fabrication and Characterization of Monolithic Integrated Three-Axis Acceleration/Pressure/Magnetic Field Sensors.

Micromachines·2024
Same author

Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2024
Same author

Artificial Synapses Based on an Optical/Electrical Biomemristor.

Nanomaterials (Basel, Switzerland)·2023
Same author

High-Performance Biomemristor Embedded with Graphene Quantum Dots.

Nanomaterials (Basel, Switzerland)·2023

Related Experiment Video

Updated: Aug 19, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.4K

Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots.

Lu Wang1, Yukai Zhang1, Peng Zhang1

  • 1Heilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Nanomaterials (Basel, Switzerland)
|November 26, 2022
PubMed
Summary

Researchers developed biocompatible gelatin-doped graphene quantum dot films for transient electronic memory devices. These eco-friendly, low-cost devices offer sustainable storage solutions with biodegradable properties.

Keywords:
OR gatesflexibilitygraphene quantum dotsphysical transients

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K
Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.9K

Related Experiment Videos

Last Updated: Aug 19, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.4K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K
Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.9K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics

Background:

  • Biomaterials are crucial for developing biodegradable and transient electronic devices.
  • Existing resistive memory technologies face challenges in storage and computing integration.

Purpose of the Study:

  • To report biocompatible gelatin-doped graphene quantum dot films as active layers for switching memory devices.
  • To investigate the electrical and physical transient properties of these novel memory devices.
  • To explore their potential for environmentally friendly and sustainable electronic applications.

Main Methods:

  • Fabrication of biocompatible gelatin-doped graphene quantum dot films.
  • Characterization of nonvolatile memory devices with write-once-read-many (WORM) properties.
  • Evaluation of device sensitivity to ultraviolet (UV) light for logic operations.
  • Assessment of biodegradation and physical transient properties in aqueous environments.

Main Results:

  • The fabricated films exhibit good electrical properties and nonvolatile memory characteristics with distinct low-resistance and high-resistance states.
  • The device successfully performed an "OR gate" logic operation, demonstrating its potential for computing integration.
  • The active layer dissolves in deionized water within 15 minutes, and the device is destroyed immediately in water, confirming biodegradability and transient nature.

Conclusions:

  • Gelatin-doped graphene quantum dot films are promising for biodegradable and transient electronic memory devices.
  • These devices offer a sustainable, low-cost solution for storage applications, addressing current integration obstacles.
  • The biocompatible and environmentally friendly nature of these materials enhances their suitability for future electronic technologies.