Atomistic structures of 〈0001〉 tilt grain boundaries in a textured Mg thin film

Nanocrystalline Mg was sputter deposited onto an Ar ion etched Si {100} substrate. Despite an ∼6 nm amorphous layer found at the interface, the Mg thin film exhibits a sharp basal-plane texture enabled by surface energy minimization. The columnar grains have abundant 〈0001〉 tilt grain boundaries in between, most of which are symmetric with various misorientation angles. Up to ∼20° tilt angle, they are composed of arrays of equally-spaced edge dislocations. Ga atoms were introduced from focused ion beam milling and found to segregate at grain boundaries and preferentially decorate the dislocation cores. Most symmetric grain boundaries are type-1, whose boundary planes have smaller dihedral angles with {21̄1̄0} rather than {101̄0}. Atomistic simulations further demonstrate that type-2 grain boundaries, having boundary planes at smaller dihedral angles with {101̄0}, are composed of denser dislocation arrays and hence have higher formation energy than their type-1 counterparts. The finding correlates well with the dominance of type-1 grain boundaries observed in the Mg thin film.