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Updated: Aug 19, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Atomically Precise Incorporation of BN-Doped Rubicene into Graphene Nanoribbons
Rémy Pawlak1, Khalid N Anindya2, Toshiki Shimizu3
1Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.
Abstract:
Substituting heteroatoms and non-benzenoid carbons into nanographene structure offers a unique opportunity for atomic engineering of electronic properties. Here we show the bottom-up synthesis of graphene nanoribbons (GNRs) with embedded fused BN-doped rubicene components on a Au(111) surface using on-surface chemistry. Structural and electronic properties of the BN-GNRs are characterized by scanning tunneling microscopy (STM) and atomic force microscopy (AFM) with CO-terminated tips supported by numerical calculations. The periodic incorporation of BN heteroatoms in the GNR leads to an increase of the electronic band gap as compared to its undoped counterpart. This opens avenues for the rational design of semiconducting GNRs with optoelectronic properties.

