Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths

Area of Science:

• Quantum Information Science
• Materials Science
• Condensed Matter Physics

Background:

• Solid-state quantum defects are key for scalable quantum information systems and hybrid classical-quantum devices.
• Diamond nitrogen-vacancy (NV) centers are representative but face challenges in controlled positioning and property tuning.
• Two-dimensional (2D) semiconductors offer a promising platform for tunable quantum defects with position control.

Purpose of the Study:

• To computationally discover novel quantum defects in 2D semiconductors for spin qubit realization.
• To identify defects with desirable properties for quantum information processing.

Main Methods:

• Computational discovery of defect families in 2D transition metal dichalcogenides (TMDs).
• Analysis of defect properties including ground state spin, zero-field splitting, and optical transition coupling.

Main Results:

• Identified a promising family of defects in 2D TMDs consisting of transition metal atoms substituted at chalcogen sites.
• These defects exhibit a desirable spin-triplet ground state.
• Achieved zero-field splitting in the tens of GHz and strong zero-phonon coupling to optical transitions in the telecom band.

Conclusions:

• The discovered defects in 2D TMDs are highly promising for realizing spin qubits.
• These defects offer tunable properties and potential for controlled positioning, addressing limitations of current solid-state systems.
• The findings pave the way for integrating quantum information processing with conventional semiconductor electronics.