Phosphorus doped and defect modified graphitic carbon nitride for boosting photocatalytic hydrogen production

The enhancement of photogenerated carrier separation efficiency is a significant factor in the improvement of photocatalyst performance in photocatalytic hydrogen evolution. Heteroatom doping and defect construction have been considered valid methods to boost the photocatalytic activity of graphitic carbon nitride. Herein, we report graphitic carbon nitride modified with P doping and N defects (PCN), and the effects of doping and defects were investigated in photocatalytic H₂ evolution. Its hydrogen evolution rate can reach up to about 59.1 μmol h^-1, which is more than 123.1 times higher than pristine graphitic carbon nitride under visible light irradiation. Importantly, the apparent quantum efficiency reaches 8.73% at 420 nm. The excellent performance of the PCN photocatalyst was attributed to the following aspects: (I) the large BET surface area of PCN affords more active sites for H₂ production and (II) the introduction of P and N defects can accelerate the charge carrier separation and transfer efficiency, leading to more efficient photocatalytic hydrogen production. The photocatalyst showed obviously enhanced activities.