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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
Shin-Ichiro Sato1,2, Shuo Li3, Andrew D Greentree3
1Quantum Beam Science Research Directorate, National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki, Gunma, 370-1292, Japan. sato.shinichiro2@qst.go.jp.
Abstract:
Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.
