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Related Concept Videos

P-N junction01:11

P-N junction

606
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
606
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

429
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
429
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

308
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
308

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Ion Current Rectification and Long-Range Interference in Conical Silicon Micropores.

Mark Aarts1, Willem Q Boon2, Blaise Cuénod1

  • 1Center for Nanophotonics, AMOLF, Science Park 109, 1098 XGAmsterdam, Netherlands.

ACS Applied Materials & Interfaces
|December 9, 2022
PubMed
Summary

Ion current rectification (ICR) in wide pores is influenced by entrance resistance and surface charge. Pore interactions significantly impact ICR, vanishing even at large pore spacings due to concentration decay.

Keywords:
Poisson−Nernst−Planck−Stokes equationconical microporeelectro-osmosision current rectificationpore arraypore−pore interactionthin membrane

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Area of Science:

  • Nanofluidics
  • Ion Transport Phenomena
  • Surface Chemistry

Background:

  • Ion current rectification (ICR) in fluidic devices is crucial for applications like desalination and energy harvesting.
  • Achieving high conductance requires thin membranes with wide pores, but understanding rectification in such systems remains complex.

Purpose of the Study:

  • To investigate ion current rectification (ICR) in micrometer-sized conical channels within thin silicon membranes.
  • To develop a theoretical framework explaining Ohmic conductance and ICR, focusing on entrance resistance and surface potential effects.

Main Methods:

  • Experimental measurement of ICR and Ohmic conductance in single and arrayed conical pores.
  • Development of a single analytic theoretical model incorporating entrance resistance and voltage-dependent surface potential.
  • Investigation of pore-pore interactions and their influence on ICR via surface charge mediation.

Main Results:

  • Demonstrated ICR in wide pores where pore diameter is comparable to membrane thickness.
  • Identified entrance resistance as critical for both Ohmic conductance and ICR.
  • Revealed voltage-dependent surface potential and significant contribution of external surface charge to rectification.
  • Observed vanishing ICR in pore arrays due to pore-pore interactions mediated by surface charge, even at 7 μm spacing.

Conclusions:

  • Entrance resistance and external surface charge are key factors governing ICR in wide pores.
  • Pore-pore interactions, mediated by long-ranged concentration decay, can eliminate ICR in sparsely populated arrays.
  • The findings provide a comprehensive understanding of ICR in nanofluidic devices with implications for device design.