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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Teng Jiao1, Wei Chen1, Zhengda Li1

  • 1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China.

Materials (Basel, Switzerland)
|December 11, 2022
PubMed

Keywords:
Ga2O3MOCVDSchottky barrier diodesheterojunction

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