Extreme Ultraviolet Lighting Using Carbon Nanotube-Based Cold Cathode Electron Beam.
Sung Tae Yoo1, Kyu Chang Park1
1Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 02447, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|December 11, 2022
Summary
A new method uses electron beams from carbon nanotube emitters to generate extreme ultraviolet (EUV) light by irradiating tin. This novel approach offers controllable EUV intensity for advanced applications.
Area of Science:
- Plasma Physics
- Materials Science
- Photonics
Background:
- Laser-driven plasma is the standard for extreme ultraviolet (EUV) generation.
- Direct electron irradiation of tin (Sn) for EUV light has been rarely explored.
Purpose of the Study:
- To demonstrate a novel method for EUV generation using a carbon nanotube (CNT)-based cold cathode electron beam (C-beam) irradiating Sn.
- To investigate the feasibility and control of EUV intensity generated by this direct electron irradiation method.
Main Methods:
- Utilizing a C-beam with approximately 12,700 CNT emitters to irradiate a Sn surface.
- Employing a photodiode with a 150 nm thick Zr filter and polymethyl methacrylate (PMMA) photoresist for EUV verification.
- Varying anode voltage, current, and electron incident angle to study EUV intensity modulation.
Main Results:
- Successful generation of EUV light through direct electron irradiation of Sn.
- Demonstrated sufficient EUV generation (at 6 W input power) to react PMMA photoresist within 30 s.
- Confirmed that EUV intensity is controllable by adjusting electron beam parameters like voltage, current, and incident angle.
Conclusions:
- The CNT-based C-beam irradiation of Sn presents a viable and controllable alternative for EUV generation.
- This technique shows significant potential for applications in advanced semiconductor lithography and high-resolution photonics.
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