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Charge Transport inside TiO2 Memristors Prepared via FEBID

Markus Baranowski1, Roland Sachser1, Bratislav P Marinković2

  • 1Physikalisches Institut, Goethe University, 60438 Frankfurt am Main, Germany.

Nanomaterials (Basel, Switzerland)
|December 11, 2022
PubMed

Keywords:
FEBIDMott-type variable-range hoppingSEM imagecurrent-voltage (i-v) curvesmemristorresistive switchingtemperature dependence measurementstitanium dioxide

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