Related Experiment Video
Updated: Aug 17, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Interfacial thermal conductance between atomically thin boron nitride and graphene
Qiuhui V Yu1, Kenji Watanabe2, Takashi Taniguchi2
1Institute for Frontier Materials, Deakin University, Waurn Ponds, Victoria 3216, Australia. luhua.li@deakin.edu.au.
Abstract:
Atomically thin hexagonal boron nitride (BN) is a promising dielectric substrate for graphene and other two-dimensional (2D) materials for performance enhancement and heat dissipation. However, the interfacial heat conductance between atomically thin BN and graphene has not been experimentally studied yet. Here, we report that the interfacial thermal conductance between high-quality graphene and trilayer BN is 9.64 ± 2.12 MW m-2 K-1 in the temperature range of 293-393 K, indicating that the interfacial thermal conductance is depressed when the heterostructure thickness is smaller than the wavelength of the low-frequency phonons, e.g. ZA in BN.
Related Concept Videos
Network Covalent Solids
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

