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Interfacial thermal conductance between atomically thin boron nitride and graphene.

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Interfacial thermal conductance between graphene and hexagonal boron nitride (BN) was experimentally measured. Results show depressed heat transfer in thin heterostructures, crucial for 2D material thermal management.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Atomically thin hexagonal boron nitride (BN) serves as a key dielectric substrate for graphene and other 2D materials.
  • BN enhances performance and aids heat dissipation in 2D material-based devices.
  • Experimental data on interfacial thermal conductance between graphene and BN is lacking.

Purpose of the Study:

  • To experimentally determine the interfacial thermal conductance between high-quality graphene and trilayer BN.
  • To investigate the effect of heterostructure thickness on thermal transport at the interface.

Main Methods:

  • Utilized experimental techniques to measure interfacial thermal conductance.
  • Focused on graphene-BN heterostructures with specific layer counts (trilayer BN).
  • Conducted measurements within a defined temperature range (293-393 K).

Main Results:

  • Reported an interfacial thermal conductance of 9.64 ± 2.12 MW m-2 K-1 for graphene-trilayer BN.
  • Observed depressed interfacial thermal conductance in thinner heterostructures.
  • Correlated the reduction in thermal conductance with phonon wavelengths, specifically low-frequency ZA phonons in BN.

Conclusions:

  • The interfacial thermal conductance between graphene and BN is quantifiable and dependent on heterostructure thickness.
  • Thin BN layers exhibit reduced heat transfer due to phonon confinement effects.
  • Findings are critical for optimizing thermal management in advanced 2D material electronic devices.