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Hierarchical Nanoscale Structuring of Solution-Processed 2D van der Waals Networks for Wafer-Scale, Stretchable
Dongjoon Rhee1, Boyun Han1, Myeongjin Jung1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
ACS Applied Materials & Interfaces
|December 15, 2022
Summary
Researchers developed a new method for creating highly stretchable two-dimensional (2D) semiconductor films using self-assembled molybdenum disulfide (MoS2) nanosheets. This technique enables crack-free, wafer-scale films with enhanced photoresponsivity for flexible electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- Two-dimensional (2D) semiconductors offer potential for lightweight, flexible, and stretchable electronics.
- Current methods for achieving stretchability often involve micropatterning, which reduces active device area and limits performance.
- Developing continuous, stretchable 2D semiconductor films without compromising device area is a significant challenge.
Purpose of the Study:
- To develop a solution-based hierarchical structuring method for creating wafer-scale, stretchable semiconducting films.
- To investigate the self-assembly of two-dimensional nanosheets for enhanced mechanical and optoelectronic properties.
- To enable the fabrication of high-performance, crack-resistant flexible electronic devices.
Main Methods:
- Hierarchical structuring via self-assembly of electrochemically exfoliated MoS2 nanosheets on a prestrained thermoplastic substrate.
- Creation of nanoscale wrinkles through substrate strain relief, followed by multigenerational wrinkle formation using soluble polymer films.
- Fabrication of stretchable MoS2 films by curing an elastomer and dissolving the thermoplastic substrate.
Main Results:
- Continuous, wafer-scale stretchable MoS2 films with three-generation hierarchical wrinkles were successfully fabricated.
- The hierarchical wrinkled MoS2 films demonstrated resistance to cracking up to nearly 100% substrate stretching.
- Enhanced photoresponsivity was observed in the visible and near-infrared (NIR) regimes compared to flat MoS2 films.
- Flat MoS2 films exhibited strain-dependent electrical responses suitable for strain sensors.
Conclusions:
- Solution-based hierarchical structuring is an effective strategy for producing highly stretchable and crack-resistant 2D semiconductor films.
- The developed method significantly improves the photoresponsivity of MoS2 films, opening possibilities for advanced optoelectronic applications.
- This approach offers a pathway for fabricating next-generation flexible and stretchable electronic devices with large active areas.
