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Room-temperature valley transistors for low-power neuromorphic computing.

Jiewei Chen1,2, Yue Zhou1,3, Jianmin Yan1,2

  • 1Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.

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|December 15, 2022
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Room-temperature valley transistors were developed using tellurium, overcoming short exciton lifetimes. These transistors enable long-lived valley polarization for efficient, low-power electronic devices and neuromorphic computing.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Valley pseudospin offers efficient information processing but is limited by short exciton lifetimes at room temperature.
  • Existing valleytronic devices face challenges in room-temperature applicability due to short carrier lifetimes.

Purpose of the Study:

  • To demonstrate room-temperature valley transistors with long-lived valley polarization.
  • To explore the potential of Weyl semiconductor tellurium (Te) for advanced electronic applications.

Main Methods:

  • Electrostatic manipulation of the non-trivial band topology in tellurium (Te).
  • Fabrication of valley transistors utilizing free carrier valley polarization.
  • Development of an ion insertion/extraction device for memory applications.

Main Results:

  • Achieved room-temperature operation of valley transistors with an ON/OFF ratio of 10^5.
  • Observed valley-polarized diffusion lengths exceeding 7 μm.
  • Demonstrated 32 non-volatile memory states in Te valley transistors with high linearity and symmetry.

Conclusions:

  • Successfully developed room-temperature valley transistors based on tellurium, overcoming previous lifetime limitations.
  • The demonstrated devices exhibit potential for low-power neuromorphic computing and artificial neural networks.
  • Long-lived valley polarization in Te opens new avenues for efficient information processing applications.