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Strain tunable quantum emission from atomic defects in hexagonal boron nitride for telecom-bands.
Akbar Basha Dhu-Al Shaik1, Penchalaiah Palla2
1Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology, Vellore, Tamil Nadu, 632014, India.
Scientific Reports
|December 15, 2022
Summary
External strain tuning of 2D hexagonal boron nitride (hBN) quantum emitters enables telecom and UV-C optical bands for quantum key distribution (QKD). This research engineers hBN defects for efficient quantum communication applications.
Area of Science:
- Materials Science
- Quantum Photonics
- Condensed Matter Physics
Background:
- Quantum emitters are crucial for quantum communication technologies like quantum key distribution (QKD).
- Existing 2D hexagonal boron nitride (hBN) quantum emitters have limitations in emission wavelength tunability, typically emitting in the UV to near-IR range.
- Achieving emission in telecom (C-band) and UV-C bands is essential for efficient long- and short-range QKD.
Purpose of the Study:
- To investigate the strain-induced tunability of quantum emission in 2D hBN with various point defects.
- To engineer hBN quantum emitters for specific optical bands required for quantum communication applications.
- To explore the potential of customized quantum emission for novel quantum photonic devices.
Main Methods:
- Density Functional Theory (DFT) computations were employed to simulate and analyze quantum emission properties.
- Three distinct normal strain types were applied to hBN structures containing various point defects.
- The emission wavelength tunability of different defects, including boron and nitrogen vacancies, was systematically examined.
Main Results:
- Significant emission wavelength tunability was achieved, reaching up to 255 nm and 1589.5 nm for specific defects (VB and VBO2, respectively).
- The study identified specific point defects in hBN that can be tuned to telecom (C-band) and UV-C optical ranges.
- Tunable quantum emission was also observed in visible, other UV, and IR spectrum ranges for various other defects.
Conclusions:
- External strain is an effective method for precisely tuning the emission wavelengths of 2D hBN quantum emitters.
- Engineered hBN quantum emitters can meet the wavelength requirements for efficient long- and short-range quantum key distribution.
- This work paves the way for developing advanced quantum photonic devices utilizing customized quantum emission properties of hBN.
