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Updated: Aug 17, 2025
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Investigation of the optical properties of a deep-ultraviolet LED with an Al nanograting structure
Abstract:
The optical properties of deep-ultraviolet (DUV) light-emitting diode (LED) with Al nanograting structure are investigated by three-dimensional (3D) finite-difference time-domain (FDTD) simulation. The peak intensity of TE and TM polarization radiation recombination rate of the grating structure is increased by 33.3% and 22.0% as compared to the control structure with Al plane. The light extraction efficiency (LEE) of the emitted light whose propagation direction is in the plane perpendicular to the Al-grating ridge is much higher than that in the plane parallel to the Al-grating ridge due to the scattering of the grating. Without considering the lateral surface extraction and packaging, the total LEE of the grating structure can be improved by 41.4% as compared to the control structure. The peak intensity of the output spectrum of the DUV LED with the grating structure can be increased by 70.3%.
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