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Optical bistability in PECVD silicon-rich nitride.

Alex Friedman, Dmitrii Belogolovskii, Andrew Grieco

    Optics Express
    |December 16, 2022
    PubMed
    Summary

    We demonstrate optical bi-stability in silicon-rich nitride (SRN) films for memory and sensing. The study confirms a thermal mechanism for bi-stable switching with a relaxation time of 18.7 microseconds.

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Nonlinear Optics

    Background:

    • Silicon-rich nitride (SRN) films are promising for photonic applications due to their tunable optical properties.
    • Optical bi-stability is crucial for developing advanced optical switches and memory devices.
    • Understanding the nonlinear optical response of SRN is essential for device optimization.

    Purpose of the Study:

    • To investigate and demonstrate optical bi-stability in a PECVD-grown SRN film.
    • To characterize the thermo-optic coefficients and nonlinear optical properties of the SRN material.
    • To explore the potential of SRN for optical switching, memory, and thermal sensing.

    Main Methods:

    • Fabrication of an SRN ring resonator device using plasma-enhanced chemical vapor deposition (PECVD).

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  • Characterization of the device's low-power optical response and thermo-optic coefficients.
  • Measurement of optically induced resonance shifts, propagation loss, absorption, and relaxation time.
  • Demonstration of bi-stable optical switching.
  • Main Results:

    • The SRN film exhibited a refractive index of 3.02 at 1550nm.
    • Thermo-optic coefficients were determined to be (2.12 ± 0.125) × 10-4/°C.
    • A relaxation time of 18.7 µs was measured, indicating a thermal nonlinearity.
    • Successful demonstration of bi-stable optical switching was achieved.

    Conclusions:

    • The study confirms the presence of significant optical bi-stability in SRN films.
    • The observed thermal nonlinearity is suitable for optical switching and memory applications.
    • SRN materials offer potential for integrated photonic devices, including thermal sensors.