High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process

Area of Science:

• Optoelectronics
• Semiconductor Devices
• Nanotechnology

Background:

• Standard metal-oxide-semiconductor field-effect transistors (MOSFETs) are typically insensitive to light due to fabrication constraints.
• Existing photodetectors often lack the required sensitivity, speed, or broad spectral range for advanced applications.

Purpose of the Study:

• To design and fabricate novel photodetectors with enhanced light sensitivity and performance.
• To investigate the impact of one-dimensional MOSFET arrays and surface plasmon resonance on photodetector characteristics.

Main Methods:

• Fabrication of photodetectors using a standard 0.8-µm complementary metal oxide semiconductor (CMOS) process.
• Utilizing one-dimensional arrays of MOSFETs with periodical slit structures to enhance light transmittance via surface plasmons (SPs) resonance.
• Characterization of photodetector performance, including responsivity (Rv), noise equivalent power (NEP), and detectivity (D*), across visible and near-infrared spectra.

Main Results:

• Achieved responsivities (Rv) exceeding 10^3 A/W, with a maximum of 1.40 × 10^5 A/W, significantly outperforming existing photodetectors.
• Obtained a minimum noise equivalent power (NEP) of 5.86 fW/Hz^0.5 and a maximum detectivity (D*) of 2.21 × 10^13 Jones.
• Demonstrated good signal-to-noise ratio at 1 GHz bandwidth and successful optical scanning imaging.

Conclusions:

• The novel photodetectors exhibit superior performance metrics, including high responsivity, low noise, and high speed.
• The integration of MOSFETs in a one-dimensional array leveraging SPs resonance offers a promising approach for next-generation photodetector technology.
• These photodetectors are suitable for widespread application in advanced imaging systems due to their high performance and broad spectral range.