Related Experiment Video
Updated: Aug 16, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Synergistic effect of p-type and n-type dopants in semiconductors for efficient electrocatalytic water splitting
Tugce Kutlusoy1, Spyridon Divanis1, Rebecca Pittkowski1,2
1Center of High Entropy Alloy Catalysis, Department of Chemistry, University of Copenhagen Universitetsparken 5, København Ø 2100 Copenhagen Denmark jan.rossmeisl@chem.ku.dk.
Abstract:
The main challenge for acidic water electrolysis is the lack of active and stable oxygen evolution catalysts based on abundant materials, which are globally scalable. Iridium oxide is the only material which is active and stable. However, Ir is extremely rare. While both active materials and stable materials exist, those that are active are usually not stable and vice versa. In this work, we present a new design strategy for activating stable materials originally deemed unsuitable due to a semiconducting nature and wide band gap energy. These stable semiconductors cannot change oxidation state under the relevant reaction conditions. Based on DFT calculations, we find that adding an n-type dopant facilitates oxygen binding on semiconductor surfaces. The binding is, however, strong and prevents further binding or desorption of oxygen. By combining both n-type and p-type dopants, the reactivity can be tuned so that oxygen can be adsorbed and desorbed under reaction conditions. The tuning results from the electrostatic interactions between the dopants as well as between the dopants and the binding site. This concept is experimentally verified on TiO2 by co-substituting with different pairs of n- and p-type dopants. Our findings suggest that the co-substitution approach can be used to activate stable materials, with no intrinsic oxygen evolution activity, to design new catalysts for acid water electrolysis.
More Related Videos
Related Concept Videos
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Types of Semiconductors
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

