Carbon dioxide-boosted growth of high-density and vertically aligned carbon nanotube arrays on a stainless steel mesh
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Updated: Aug 16, 2025

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Jun Jie Cao1, Yu Jiang1, Hang Zhan1
1School of Mechanical and Power Engineering, East China University of Science and Technology 130 Meilong Road Shanghai 200237 China jnwang@ecust.edu.cn +86-21-64252360.
Abstract:
Vertically aligned carbon nanotubes (VACNTs), a unique group of highly aligned CNTs normal to a substrate, have been extensively studied during the past decades. However, it is a long-standing challenge to improve the height of VACNTs due to the incidental deactivation of catalysts during growth. Herein, we demonstrate a facile strategy toward synthesizing high-density and well-aligned CNT arrays from in situ formed Fe-based catalysts on a stainless steel (SS) mesh. These catalysts were generated by direct oxidation-reduction treatment to the SS, which had excellent adhesion on the mesh substrate, and thus suppressed catalyst aggregation and promoted CNT growth under the flow of C2H2. In particular, by feeding additional CO2 at an optimal rate, the height of CNT arrays could be boosted from ca. 15 μm to ca. 80.0 μm, one of the highest heights observed for VACNTs on SS-based substrates so far. This is attributed to the prolonged activity of the catalysts by CO2 induced removal of extra carbon. Our study might provide an insight into the development of efficient strategies for VACNT growth on conductive substrates.

